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| SMD Type NPN Silicon Transistors 2SC4942 Transistors Features New package with dimensions in between those of small signal and power signal package High voltage Fast switching speed Absolute Maximum Ratings Ta = 25 Parameter Collector to base voltage Collector to emitter voltage Emitter to base voltage Collector current (DC) Collector current (pulse) Total power dissipation Junction temperature Storage temperature *1 PW 10 ms, duty cycle 2 Symbol VCBO VCEO VEBO ID(DC) ID(pulse) *1 PT *2 Tj Tstg Rating 600 600 7 1 2 2 150 -55 to 150 Unit V V V A A W 50 % *2 7.5 cm X 0.7 mm ceramic board mounted Electrical Characteristics Ta = 25 Parameter Collector cutoff current Emitter cutoff current DC current gain Collector saturation voltage Base saturation voltage Gain bandwidth product Output capacitance Turn-on time Storage time Fall time Symbol ICBO IEBO hFE VCE(sat) VBE(sat) fT Cob tON tstg tf Testconditons VCB = 600 V, IE = 0 VEB = 7.0 V, IC = 0 VCE = 5.0 V, IC = 0.1 A VCE = 5.0 V, IC = 0.5 A IC = 400 mV, IB = 80 mA IC = 400 mV, IB = 80 mA VCE = 5.0 V, IE = ?50 mA VCB = 10 V, IE = 0, f = 1.0 MHz IC = 0.5 A, VCC= 250 V IB1 = ?IB2 = 0.1 A RL = 500U 30 5 55 10 0.35 0.9 30 15 0.1 4.0 0.2 0.5 5.0 0.5 1.0 1.2 V V MHz pF is is is Min Typ Max 10 10 120 Unit iA iA hFE Classification Marking hFE AA1 30 to 60 AA2 40 to 80 AA3 60 to120 www.kexin.com.cn 1 |
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